CEB: Class Quality Evaluator for BlueJ. - Yu-Kyung Kang; Suk-hyung Hwang; Hae Sool Yang; Jung-Bae Lee; Hee-Chul Choi; Hyun-Wook Wee; Dong-Soon Kim (ICCSA (3), 2005)

A 512-mb DDR3 SDRAM prototype with CIO minimization and self-calibration techniques. - Churoo Park; Hoeju Chung; Yun-Sang Lee; Jaekwan Kim 003; JaeJun Lee; Moo Sung Chae; Dae-Hee Jung; Sung-Ho Choi; Seung-young Seo; Taek-Seon Park; Jun-Ho Shin; Jin-Hyung Cho; et al. (IEEE J. Solid State Circuits, 2006)

Virtual Development Environment Based on SystemC for Embedded Systems. - Sang-Young Cho; Yoojin Chung; Jung-Bae Lee (International Conference on Computational Science (4), 2007)

8Gb 3D DDR3 DRAM using through-silicon-via technology. - Uksong Kang; Hoeju Chung; Seongmoo Heo; Soon-Hong Ahn; Hoon Lee; Sooho Cha; Jaesung Ahn; Dukmin Kwon; Jin Ho Kim; Jae-Wook Lee 007; Han-Sung Joo; Woo-Seop Kim; et al. (ISSCC, 2009)

A 0.4-to-1.6GHz low-OSR ΔΣ DLL with self-referenced multiphase generation. - Xueyi Yu; Woogeun Rhee; Zhihua Wang 001; Jung-Bae Lee; Changhyun Kim (ISSCC, 2009)

BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel. - Young-Chan Jang; Hoeju Chung; Youngdon Choi; Hwan-Wook Park; Jaekwan Kim 003; Soouk Lim; Jung Sunwoo; Moon-Sook Park; Hyung-Seuk Kim; Sang-Yun Kim; Yun-Sang Lee; Woo-Seop Kim; et al. (IEEE J. Solid State Circuits, 2009)

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. - Jung-Sik Kim; Chi Sung Oh; Hocheol Lee; Donghyuk Lee; Hyong-Ryol Hwang; Sooman Hwang; Byongwook Na; Joungwook Moon; Jin-Guk Kim; Hanna Park; Jang-Woo Ryu; Kiwon Park; et al. (ISSCC, 2011)

A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. - Yong-Cheol Bae; Joon-Young Park; Sang Jae Rhee; Seung-Bum Ko; Yonggwon Jeong; Kwang-Sook Noh; Young Hoon Son; Jaeyoun Youn; Yonggyu Chu; Hyunyoon Cho; Mijo Kim; Daesik Yim; et al. (ISSCC, 2012)

An 8GB/s quad-skew-cancelling parallel transceiver in 90nm CMOS for high-speed DRAM interface. - Young-Sik Kim; Seon-Kyoo Lee; Seung-Jun Bae; Young-Soo Sohn; Jung-Bae Lee; Joo-Sun Choi; Hong-June Park; Jae-Yoon Sim (ISSCC, 2012)

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. - Jung-Sik Kim; Chi Sung Oh; Hocheol Lee; Donghyuk Lee; Hyong-Ryol Hwang; Sooman Hwang; Byongwook Na; Joungwook Moon; Jin-Guk Kim; Hanna Park; Jang-Woo Ryu; Kiwon Park; et al. (IEEE J. Solid State Circuits, 2012)

An 8Gb/s 0.65mW/Gb/s forwarded-clock receiver using an ILO with dual feedback loop and quadrature injection scheme. - Ji-Hwan Seol; Young-Ju Kim 001; Sang-Hye Chung; Kyung-Soo Ha; Seung-Jun Bae; Jung-Bae Lee; Joo-Sun Choi; Lee-Sup Kim (ISSCC, 2013)

A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. - Kyomin Sohn; Taesik Na; Indal Song; Yong Shim; Wonil Bae; Sanghee Kang; Dongsu Lee; Hangyun Jung; Seok-Hun Hyun; Hanki Jeoung; Ki Won Lee; Jun-Seok Park; et al. (IEEE J. Solid State Circuits, 2013)

25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation. - Tae-Young Oh; Hoeju Chung; Young-Chul Cho; Jang-Woo Ryu; Kiwon Lee; Changyoung Lee; Jin-Il Lee; Hyoung-Joo Kim 002; Min-Soo Jang; Gong-Heum Han; Kihan Kim; Daesik Moon; et al. (ISSCC, 2014)

A Forwarded-Clock Receiver With Constant and Wide-Range Jitter-Tracking Bandwidth. - Sang-Hye Chung; Young-Ju Kim 001; Kyung-Soo Ha; Seung-Jun Bae; Jung-Bae Lee; Lee-Sup Kim (IEEE Trans. Circuits Syst. II Express Briefs, 2014)

A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. - Jin-Seok Heo; Kihan Kim; Dong-Hoon Lee; Chang-Kyo Lee; Daesik Moon; Kiho Kim; Jin-Hyeok Baek; Sung-Woo Yoon; Hui-Kap Yang; Kyungryun Kim; Youngjae Kim; Bokgue Park; et al. (VLSI Circuits, 2019)

22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. - Hyung-Joon Chi; Chang-Kyo Lee; Junghwan Park; Jin-Seok Heo; Jaehoon Jung; Dongkeon Lee; Dae-Hyun Kim 003; Dukha Park; Kihan Kim; Sang-Yun Kim 001; Jinsol Park; Hyunyoon Cho; et al. (ISSCC, 2020)

22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme. - Chi-Sung Oh; Ki Chul Chun; Young-Yong Byun; Yong-Ki Kim; So-Young Kim; Yesin Ryu; Jaewon Park; Sinho Kim; Sang-uhn Cha; Dong-Hak Shin; Jungyu Lee 002; Jong-Pil Son; et al. (ISSCC, 2020)

A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM With Various High-Speed and Low-Power Techniques. - Kyung-Soo Ha; Seungseob Lee; Youn-Sik Park; Hyuck-Joon Kwon; Tae-Young Oh; Young-Soo Sohn; Seung-Jun Bae; Kwang-Il Park; Jung-Bae Lee; Chang-Kyo Lee; Dongkeon Lee; Daesik Moon; et al. (IEEE J. Solid State Circuits, 2020)

25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3rd-Generation 10nm DRAM. - Yong-Hun Kim; Hyung-Jin Kim; Jaemin Choi; Min-Su Ahn; Dongkeon Lee; Seung-Hyun Cho; Dong-Yeon Park; Young-Jae Park; Min-Soo Jang; Yong-Jun Kim; Jinyong Choi; Sung-Woo Yoon; et al. (ISSCC, 2021)

A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme. - Ki Chul Chun; Yong-Ki Kim; Yesin Ryu; Jaewon Park; Chi Sung Oh; Young-Yong Byun; So-Young Kim; Dong-Hak Shin; Jun Gyu Lee 002; Byung-Kyu Ho; Min-Sang Park; Seong-Jin Cho; et al. (IEEE J. Solid State Circuits, 2021)

An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques. - Chang-Kyo Lee; Hyung-Joon Chi; Jin-Seok Heo; Junghwan Park; Jin-Hun Jang; Dongkeon Lee; Jaehoon Jung; Dong-Hun Lee; Dae-Hyun Kim 003; Kihan Kim; Sang-Yun Kim 001; Dukha Park; et al. (IEEE J. Solid State Circuits, 2021)