A Single-Data-Bit Blind Oversampling Data-Recovery Circuit With an Add-Drop FIFO for USB2.0 High-Speed Interface. - Sang-Hune Park; Kwang-Hee Choi; Jung-Bum Shin; Jae-Yoon Sim; Hong-June Park (IEEE Trans. Circuits Syst. II Express Briefs, 2008)

An Interpolating Digitally Controlled Oscillator for a Wide-Range All-Digital PLL. - Kwang-Hee Choi; Jung-Bum Shin; Jae-Yoon Sim; Hong-June Park (IEEE Trans. Circuits Syst. I Regul. Pap., 2009)

5-Gb/s Peak Detector Using a Current Comparator and a Three-State Charge Pump. - Jong-Hoon Kim; Jung-Bum Shin; Jae-Yoon Sim; Hong-June Park (IEEE Trans. Circuits Syst. II Express Briefs, 2011)

25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation. - Tae-Young Oh; Hoeju Chung; Young-Chul Cho; Jang-Woo Ryu; Kiwon Lee; Changyoung Lee; Jin-Il Lee; Hyoung-Joo Kim 002; Min-Soo Jang; Gong-Heum Han; Kihan Kim; Daesik Moon; et al. (ISSCC, 2014)

23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices. - Hye-Jung Kwon; Eunsung Seo; ChangYong Lee; Young-Hun Seo; Gong-Heum Han; Hye-Ran Kim; Jong-Ho Lee; Min-Su Jang; Sung-Geun Do; Seung-Hyun Cho; Jae-Koo Park; Su-Yeon Doo; et al. (ISSCC, 2017)

A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. - Young-Ju Kim 001; Hye-Jung Kwon; Su-Yeon Doo; Yoon-Joo Eom; Young-Sik Kim; Min-Su Ahn; Yong-Hun Kim; Sang-Hoon Jung; Sung-Geun Do; Chang-Yong Lee; Jae-Sung Kim; Dong-Seok Kang; et al. (ISSCC, 2018)

A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL. - Daehyun Kwon; Heon Su Jeong; Jaemin Choi; Wijong Kim; Jae Woong Kim; Junsub Yoon; Jungmin Choi; Sanguk Lee; Hyunsub Norbert Rie; Jin-Il Lee; Jongbum Lee; Taeseong Jang; et al. (ISSCC, 2023)

A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. - Daewoong Lee; Jaehyeok Baek; Hye-Jung Kwon; Daehyun Kwon; Chulhee Cho; Sang-Hoon Kim; Donggun An; Chulsoon Chang; Unhak Lim; Jiyeon Im; Wonju Sung; Hye-Ran Kim; et al. (IEEE J. Solid State Circuits, 2023)