Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure. - Jung-Hui Tsai; I-Hsuan Hsu; Tzu-Yen Weng; Chien-Ming Li (Microelectron. J., 2007)

Investigations on In₀.₁₂Al₀.₈₈N/AlN/AlₓGa₁-ₓN/In₀.₁₂Al₀.₈₈N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design. - Jian-Hong Ke; Ching-Sung Lee; Han-Yin Liu; Jung-Hui Tsai; Wei-Chou Hsu (IEEE Access, 2024)