Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties. - Lauren Hoang; Alwin Daus; Sumaiya Wahid; Jimin Kwon; Jung-Soo Ko; Shengjun Qin; Mahnaz Islam; Krishna C. Saraswat; H.-S. Philip Wong; Eric Pop (DRC, 2022)

First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation. - Sumaiya Wahid; Alwin Daus; Jimin Kwon; Shengjun Qin; Jung-Soo Ko; Krishna C. Saraswat; H.-S. Philip Wong; Eric Pop (DRC, 2022)

Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{ text{on}}$ using Post-Metal Anneal. - Marc Jaikissoon; Jung-Soo Ko; Eric Pop; Krishna C. Saraswat (DRC, 2023)

Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2. - Jung-Soo Ko; Zichen Zhang 019; Sol Lee; Marc Jaikissoon; Robert K. A. Bennett; Kwanpyo Kim; Andrew C. Kummel; Prabhakar Bandaru; Eric Pop; Krishna C. Saraswat (ESSDERC, 2023)

Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches. - Jung-Soo Ko; Alex Shearer; Sol Lee; Kathryn M. Neilson; Marc Jaikissoon; Kwanpyo Kim; Stacey Bent; Krishna Saraswat; Eric Pop (VLSI Technology and Circuits, 2024)