Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements. - Hyuck In Kwon; In Man Kang; Byung-Gook Park; Jong Duk Lee; Sang Sik Park; Jung Chak Ahn; Yong Hee Lee (Microelectron. Reliab., 2004)

1/2-inch 7.2MPixel CMOS Image Sensor with 2.25µm Pixels Using 4-Shared Pixel Structure for Pixel-Level Summation. - Young Chan Kim; Yi Tae Kim; Sung Ho Choi; Hae Kyung Kong; Sung In Hwang; Juhyun Ko; Bumsuk Kim; Tetsuo Asaba; Su Hun Lim; June Soo Hahn; Joon Hyuk Im; Tae Seok Oh; et al. (ISSCC, 2006)

High-speed image sensor technologies. - Johannes Solhusvik; Jung-Chak Ahn; Jan T. Bosiers; Boyd Fowler; Makoto Ikeda; Shoji Kawahito; Jerry Lin; Dan McGrath; Katsu Nakamura; Jun Ohta; Ramchan Woo (ISSCC, 2010)

A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting. - Sangjoo Lee; Kyungho Lee; Jongeun Park; Hyungjun Han; Younghwan Park; Taesub Jung; Youngheup Jang; Bumsuk Kim; Yitae Kim; Shay Hamami; Uzi Hizi; Mickey Bahar; et al. (ISSCC, 2011)

Backside-illumination 14µm-pixel QVGA time-of-flight CMOS imager. - Min Seok Oh; Hae Kyung Kong; Han Soo Lee; Kyungil Kim; Kwanghyuk Bae; Soo Bang Kim; Sungkwan Kim; Moosup Lim; Jung Chak Ahn; Tae-Chan Kim 002; Hiroshige Goto; Seoung Hyun Kim; et al. (NEWCAS, 2012)

A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor. - Sung Ho Choi; Yi Tae Kim; Min Seok Oh; Younghwan Park; Jeongjin Cho; Youngheup Jang; Hyungjun Han; Jongwon Choi; Howoo Park; Sangil Jung; Hoon Sang Oh; Jung Chak Ahn; et al. (Sensors, Cameras, and Systems for Industrial and Scientific Applications, 2013)

7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate. - JungChak Ahn; Kyungho Lee; Yitae Kim; Heegeun Jeong; Bumsuk Kim; Hongki Kim; Jongeun Park; Taesub Jung; Wonje Park; Taeheon Lee; Eunkyung Park 003; Sangjun Choi; et al. (ISSCC, 2014)

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. - Hyunchul Kim; Jongeun Park; Insung Joe; Doowon Kwon; Joo Hyoung Kim; Dongsuk Cho; Taehun Lee; Changkyu Lee; Haeyong Park; Soojin Hong; Chongkwang Chang; Jingyun Kim; et al. (ISSCC, 2020)

5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)

A Low-Voltage 0.7 µm Pixel with 6000 e- Full-Well Capacity for a Low-Power CMOS Image Sensor. - Seung-Wook Lee; Seungwon Cha; Dongyoung Jang; Mihye Kim; Haewon Lee; Nakyung Lee; Seonok Kim; Kwan-Young Oh; Daehyung Lee; Seunghan Hong; Hana Lee; Sunghoon Oh; et al. (Imaging Sensors and Systems, 2021)

A single chip PPG sensor with enhanced IR sensitivity for low power and small size. - Jungwook Lim; Jihun Kim; Long Yan; Hyunpil Noh; Seungki Jung; Doosik Seol; Junghyung Pyo; Taesub Jung; Jungbin Yun; Dukseo Park; Howoo Park; Kyungho Lee; et al. (Imaging Sensors and Systems, 2021)

A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation. - Min-Sun Keel; Daeyun Kim; Yeomyung Kim; Myunghan Bae; Myoungoh Ki; Bumsik Chung; Sooho Son; Hoyong Lee; Heeyoung Jo; Seung-Chul Shin; Sunjoo Hong; Jaeil An; et al. (ISSCC, 2021)

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. - Jongeun Park; Sungbong Park; Kwansik Cho; Taehun Lee; Changkyu Lee; Donghyun Kim; Beomsuk Lee; SungIn Kim; Ho-Chul Ji; Dongmo Im; Haeyong Park; Jinyoung Kim; et al. (ISSCC, 2021)

Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution. - Insung Joe; Yunki Lee; Hye Yeon Park; Jong Uk Kim; Dongyeon Kang; Taehoon Kim; Minkwan Kim; Kwangmin Lee; Minsung Heo; Inho Ro; Jinhyung Kim; Inyong Park; et al. (VLSI Circuits, 2021)

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory. - Min-Woong Seo; Myunglae Chu; Hyun-Yong Jung; Suksan Kim; Jiyoun Song; Junan Lee; Sung-Yong Kim; Jongyeon Lee; Sung-Jae Byun; Daehee Bae; Minkyung Kim 010; Gwi-Deok Lee; et al. (VLSI Circuits, 2021)

All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors. - Eun Sub Shim; Kyungho Lee; Junghyung Pyo; Wooseok Choi; Jungbin Yun; Taesub Jung; Kyungduck Lee; Seyoung Kim; Chanhee Lee; Seungki Baek; Hyuncheol Kim; Sungsoo Choi; et al. (VLSI Circuits, 2021)

A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation. - Min-Sun Keel; Daeyun Kim; Yeomyung Kim; Myunghan Bae; Myoungoh Ki; Bumsik Chung; Sooho Son; Hoyong Lee; Seung-Chul Shin; Myeonggyun Kye; Jaeil An; Yonghun Kwon; et al. (IEEE J. Solid State Circuits, 2021)

World's first 16: 4: 1 triple conversion gain sensor with all-pixel AF for 82.4dB single exposure HDR. - Changhyun Park; Hongsuk Lee; Eun Sub Shim; Jungbin Yun; Kyungho Lee; Yun-Hwan Jung; Sukki Yoon; Ilyun Jeong; JungChak Ahn; Duckhyun Chang (Imaging Sensors and Systems, 2022)

A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology. - Taesub Jung; Masato Fujita; Jeongjin Cho; Kyungduck Lee; Doosik Seol; Sungmin An; Chanhee Lee; Youjin Jeong; Minji Jung; Sachoun Park; Seungki Baek; Seungki Jung; et al. (ISSCC, 2022)

Advanced novel optical stack technologies for high SNR in CMOS Image Sensor. - Hye Yeon Park; Yunki Lee; Jonghoon Park; Hyunseok Song; Taesung Lee; Hyung Keun Gweon; Yunji Jung; Jeongmin Bae 004; Boseong Kim; Junwon Han; Seungwon Kim; Cheolsang Yoon; et al. (VLSI Technology and Circuits, 2022)

A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10, 000e- by Dual Vertical Transfer Gate Technology. - Jungbin Yun; Seungjoon Lee; Seungwon Cha; Jihun Kim; Jeongho Lee; Hanseok Kim; Eungkyu Lee; Seonok Kim; Seunghan Hong; Hyungchae Kim; Jinsuk Huh; Sungchul Kim; et al. (VLSI Technology and Circuits, 2022)

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory. - Min-Woong Seo; Myunglae Chu; Hyun-Yong Jung; Suksan Kim; Jiyoun Song; Daehee Bae; Sanggwon Lee; Junan Lee; Sung-Yong Kim; Jongyeon Lee; Minkyung Kim 010; Gwi-Deok Lee; et al. (IEEE J. Solid State Circuits, 2022)

A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower. - Hyuncheol Kim; Yun Hyeok Kim; Sanghyuck Moon; Hwanwoong Kim; Byeongjun Yoo; Jueun Park; Seyoung Kim; June-Mo Koo; Sewon Seo; Hye Ji Shin; Younghwan Choi; Jinwoo Kim; et al. (ISSCC, 2023)

Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range. - Dongsuk Yoo; Youngtae Jang; Youngchan Kim; Jihun Shin; Kangsun Lee; Seok-Yong Park; Seungho Shin; Hongsuk Lee; Seojoo Kim; Joongseok Park; Cheonho Park; Moosup Lim; et al. (Sensors, 2023)