A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF. - Sehee Lim; Youngin Goh; Young Kyu Lee; Dong Han Ko; Junghyeon Hwang; Minki Kim; Yeongseok Jeong; Hunbeom Shin; Sanghun Jeon; Seong-Ook Jung (ESSCIRC, 2022)

Ultra-high Tunneling Electroresistance Ratio (2 × 104) & Endurance (108) in Oxide Semiconductor-Hafnia Self-rectifying (1.5 × 103) Ferroelectric Tunnel Junction. - Junghyeon Hwang; Chaeheon Kim; Hunbeom Shin; Hwayoung Kim; Sang-Hee Ko Park; Sanghun Jeon (VLSI Technology and Circuits, 2023)

Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices. - Sehee Lim; Youngin Goh; Young Kyu Lee; Dong Han Ko; Junghyeon Hwang; Yeongseok Jeong; Hunbeom Shin; Sanghun Jeon; Seong-Ook Jung (IEEE J. Solid State Circuits, 2023)

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology. - Venkateswarlu Gaddam; Junghyeon Hwang; Hunbeom Shin; Chaeheon Kim; Giuk Kim; Hyung-Jun Kim; Jooho Lee; Hyun-Cheol Kim; Bumsu Park; Suhwan Lim; Sang Yun Kim; Kwangsoo Kim; et al. (VLSI Technology and Circuits, 2024)

Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security. - Sehee Lim; Junghyeon Hwang; Dong Han Ko; Se Keon Kim; Tae Woo Oh; Sanghun Jeon; Seong-Ook Jung (IEEE Internet Things J., 2024)