A 512GB 1.1V Managed DRAM Solution with 16GB ODP and Media Controller. - Seong Ju Lee; Byung Deuk Jeon; Kyeong Pil Kang; Dong Yoon Ka; Na Yeon Kim; Yongseop Kim; Yunseok Hong; Mankeun Kang; Jinyong Min; Mingyu Lee; Chunseok Jeong; Kwandong Kim; et al. (ISSCC, 2019)

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. - Dong-Uk Lee; Ho Sung Cho; Jihwan Kim; Young Jun Ku; Sangmuk Oh; Chul Dae Kim; Hyun Woo Kim; Wooyoung Lee; Tae-Kyun Kim 001; Tae Sik Yun; Min Jeong Kim; SeungGyeon Lim; et al. (ISSCC, 2020)

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. - Myeong-Jae Park; Ho Sung Cho; Tae-Sik Yun; Sangjin Byeon; Young Jun Koo; Sang-Sic Yoon; Dong-Uk Lee; Seokwoo Choi; Ji Hwan Park; Jinhyung Lee; Kyungjun Cho; Junil Moon; et al. (ISSCC, 2022)

A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. - Myeong-Jae Park; Jinhyung Lee; Kyungjun Cho; Ji Hwan Park; Junil Moon; Sung-Hak Lee; Tae-Kyun Kim 001; Sanghoon Oh; Seokwoo Choi; Yongsuk Choi; Ho Sung Cho; Tae-Sik Yun; et al. (IEEE J. Solid State Circuits, 2023)

13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. - Jinhyung Lee; Kyungjun Cho; Chang Kwon Lee; Yeonho Lee 002; Jae-Hyung Park; Su-Hyun Oh; Yucheon Ju; Chunseok Jeong; Ho Sung Cho; Jaeseung Lee; Tae-Sik Yun; Jin Hee Cho; et al. (ISSCC, 2024)