GaN HEMT reliability. - Jesús A. del Alamo; Jungwoo Joh (Microelectron. Reliab., 2009)

Physics of electrical degradation in GaN high electron mobility transistors. - Jungwoo Joh (2009)

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate. - Sefa Demirtas; Jungwoo Joh; Jesús A. del Alamo (Microelectron. Reliab., 2010)

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. - Jungwoo Joh; Feng Gao; Tomás Palacios; Jesús A. del Alamo (Microelectron. Reliab., 2010)

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors. - Jungwoo Joh; Jesús A. del Alamo; Kurt Langworthy; Sujing Xie; Tsvetanka Zheleva (Microelectron. Reliab., 2011)

Impact of gate placement on RF power degradation in GaN high electron mobility transistors. - Jungwoo Joh; Jesús A. del Alamo (Microelectron. Reliab., 2012)

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits. - Jungwoo Joh; Yezee Seo; Hoon-Kyu Kim; Taekyoung Kwon 002 (WISA, 2017)

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs. - Ethan S. Lee; Luis Hurtado; Jungwoo Joh; Srikanth Krishnan; Sameer Pendharkar; Jesús A. del Alamo (IRPS, 2019)

Current Crowding Impact on Electromigration in Al Interconnects. - Young-Joon Park; Jungwoo Joh; Jayhoon Chung; Srikanth Krishnan (IRPS, 2019)

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. - Ethan S. Lee; Jungwoo Joh; Dong-Seup Lee; Jesús A. del Alamo (IRPS, 2022)

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited). - Sandeep R. Bahl; Jungwoo Joh; Fei Yang (IRPS, 2024)