Simulation study on the high-k SJ-VDMOS with gradient side-wall. - Weizhen Chen; Junji Cheng; Jingjie Lin; Xingbi Chen (MIPRO, 2018)

Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions. - Junji Cheng; Ping Li; Weizhen Chen; Bo Yi; Xingbi Chen (MIPRO, 2018)

Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices. - Haimeng Huang; Jun Huang; Huan Hu; Junji Cheng; Bo Yi (IEEE Access, 2019)

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor. - Jingjie Lin; Ping Li; Junji Cheng; Jiayu Wu; Bo Yi; Xingbi Chen (IEICE Electron. Express, 2019)

SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield. - Bo Yi; Hao Hu; Jia Lin; Junji Cheng; Haimeng Huang; MouFu Kong (IEICE Electron. Express, 2019)

Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. - Junji Cheng; Jingjie Lin; Weizhen Chen; Shiying Wu; Haimeng Huang; Bo Yi (IEEE Access, 2020)

Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. - Bo Yi; Yi Feng Peng; Qing Zhao; MouFu Kong; Junji Cheng; Haimeng Huang (IEICE Electron. Express, 2020)

A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. - Zheng Wu; Chao Xia; Bo Yi; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang; Wenkun Shi (ASICON, 2021)

A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. - Bo Yi; Zheng Wu; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang (ASICON, 2021)

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. - Bo Yi; Haimeng Huang; Haoran Hu; MouFu Kong; Yilin Guo; Wenkun Shi; Junji Cheng; Hongqiang Yang (ASICON, 2023)

Temperature Dependent Optimization for Specific On-Resistance for 900 V Superjunction MOSFETs: Numerical Calculation and Comparison. - Zonghao Zhang; Xi Wang; Keqiang Ma; Siliang Wang; Chenxing Wang; Haoyang Zhou; Haimeng Huang; Junji Cheng; Bo Yi; Hongqiang Yang (ASICON, 2023)

Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design. - Bo Yi; Yi Xu; LiTian Zheng; Junji Cheng; Haimeng Huang; MouFu Kong; Hongqiang Yang (Microelectron. J., 2023)