Challenges to realize highly reliable SiC power devices: From the current status and issues of SiC wafers. - Junji Senzaki; Shohei Hayashi; Yoshiyuki Yonezawa; Hajime Okumura (IRPS, 2018)

Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. - Junji Senzaki; Ryoji Kosugi; Keiko Masumoto; Takeshi Mitani; Takeharu Kuroiwa; Hiroshi Yamaguchi (IRPS, 2022)