Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy. - Xianzhou Shao; Junshuai Chai; Min Liao; Jiahui Duan; Fengbin Tian; Xiaoyu Ke; Xiaoqing Sun; Hao Xu; Jinjuan Xiang; Xiaolei Wang; Wenwu Wang 006 (IMW, 2023)

Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. - Shuhao Wu; Bo Chen; Chengcheng Wang; Junyao Mei; Maoying Bai; Xuepeng Zhan; Jixuan Wu; Junshuai Chai; Hao Xu; Xiaolei Wang; Jiezhi Chen (Microelectron. J., 2023)

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors. - Saifei Dai; Songwei Li; Shuangshuang Xu; Fengbin Tian; Junshuai Chai; Jiahui Duan; Wenjuan Xiong; Jinjuan Xiang; Yanrong Wang; Hao Xu; Jing Zhang; Xiaolei Wang; et al. (IMW, 2024)

Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer. - Runhao Han; Jia Yang; Tao Hu; Mingkai Bai; Yajing Ding; Xianzhou Shao; Saifei Dai; Xiaoqing Sun; Junshuai Chai; Hao Xu; Xiaolei Wang; Wenwu Wang 006; et al. (IRPS, 2025)