Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism. - Jongwoo Park 001; Miji Lee; Hanbyul Kang; Wooram Ko; Eunkyeong Choi; Junsik Im; Minwoo Lee; Dohwan Chung; Jinchul Park; Sangchul Shin; Sangwoo Pae (IRPS, 2015)