Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates. - Xiaoliang Wang; Cuimei Wang; Guoxin Hu; Junxi Wang; Junxue Ran; Cebao Fang; Jianping Li; Yiping Zeng; Jinmin Li; Xinyu Liu; He Qian (Sci. China Ser. F Inf. Sci., 2005)

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD. - Junxue Ran; Xiaoliang Wang; Guoxin Hu; Junxi Wang; Jianping Li; Cuimei Wang; Yiping Zeng; Jinmin Li (Microelectron. J., 2006)

Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition. - Xiaoyan Wang; Xiaoliang Wang; Guoxin Hu; Baozhu Wang; Zhiyong Ma; Hongling Xiao; Cuimei Wang; Junxue Ran; Jianping Li (Microelectron. J., 2007)

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure. - Lunchun Guo; Xiaoliang Wang; Cuimei Wang; Hongling Xiao; Junxue Ran; Weijun Luo; Xiaoyan Wang; Baozhu Wang; Cebao Fang; Guoxin Hu (Microelectron. J., 2008)

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. - Weijun Luo; Xiaoliang Wang; Lunchun Guo; Hongling Xiao; Cuimei Wang; Junxue Ran; Jianping Li; Jinmin Li (Microelectron. J., 2008)

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. - Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; Jianping Li; Hongxin Liu; Yanling Chen; Fuhua Yang; Jinmin Li (Microelectron. J., 2008)