Modeling of Content addressable memory using 2D Reconfigurable Transistors. - Ashwin Tunga; Junzhe Kang; Ziing Zhao; Ankit Shukla 002; Wenjuan Zhu 002; Shaloo Rakheja (DRC, 2024)

Impact of Lightly Doped Drain on Hot Carrier Degradation Variability in N-FETs and SRAM Cells. - Qiao Teng; Yongyu Wu; Junzhe Kang; Kai Xu; Dawei Gao (IRPS, 2024)