A ultra-low-power FPGA based on monolithically integrated RRAMs. - Pierre-Emmanuel Gaillardon; Xifan Tang; Jury Sandrini; Maxime Thammasack; Somayyeh Rahimian Omam; Davide Sacchetto; Yusuf Leblebici; Giovanni De Micheli (DATE, 2015)

Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology. - Jury Sandrini; Tugba Demirci; Maxime Thammasack; Davide Sacchetto; Yusuf Leblebici (ISCAS, 2015)

Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology. - Jury Sandrini; Marios Barlas; Maxime Thammasack; Tugba Demirci; Michele De Marchi; Davide Sacchetto; Pierre-Emmanuel Gaillardon; Giovanni De Micheli; Yusuf Leblebici (IEEE J. Emerg. Sel. Topics Circuits Syst., 2016)

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs. - B. Attarimashalkoubeh; Jury Sandrini; Elmira Shahrabi; Yusuf Leblebici (ESSDERC, 2017)

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance. - Elmira Shahrabi; Cecilia Giovinazzo; Jury Sandrini; Yusuf Leblebici (PRIME, 2018)

Improving Ge-rich GST ePCM reliability through BEOL engineering. - Andrea Redaelli; Anna Gandolfo; Giulia Samanni; Enrico Gomiero; Elisa Petroni; Luca Scotti; Andrea Lippiello; Paolo Mattavelli; J. Jasse; D. Codegoni; A. Serafini; Rossella Ranica; et al. (ESSDERC, 2021)

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. - Joel Minguet Lopez; Lucas Hudeley; Laurent Grenouillet; Diego Alfaro Robayo; Jury Sandrini; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Damien Deleruyelle; Niccolo Castellani; Marc Bocquet; Jean-Michel Portal; et al. (IRPS, 2021)

A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. - Joao Henrique Quintino Palhares; Yann Beilliard; Jury Sandrini; Franck Arnaud; Kevin Garello; Guillaume Prenat; Lorena Anghel; Fabien Alibart; Dominique Drouin; Philippe Galy (CoRR, 2023)