Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability. - Michael J. Mutch; Thomas Pomorski; Brad C. Bittel; Corey J. Cochrane; Patrick M. Lenahan; Xin Liu; Robert J. Nemanich; Justin Brockman; Marc French; Markus Kuhn; Benjamin French; Sean W. King (Microelectron. Reliab., 2016)

eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology. - James A. O'Donnell; Chris Connor; Tanmoy Pramanik; Jeff Hicks; Juan G. Alzate; Fatih Hamzaoglu; Justin Brockman; Oleg Golonzka; Kevin Fischer (IRPS, 2019)

A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique. - Liqiong Wei; Juan G. Alzate; Umut Arslan; Justin Brockman; Nilanjan Das; Kevin Fischer; Tahir Ghani; Oleg Golonzka; Patrick Hentges; Rawshan Jahan; Pulkit Jain; Blake C. Lin; et al. (ISSCC, 2019)