Through silicon via to FinFET noise coupling in 3-D integrated circuits. - A. Rouhi Najaf Abadi; W. Guo; X. Sun; K. Ben Ali; Jean-Pierre Raskin; Martin Rack; C. Roda Neve; M. Choi; V. Moroz; Geert Van der Plas; Ingrid De Wolf; Eric Beyne; et al. (ICICDT, 2015)

Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. - K. Ben Ali; P. M. Gammon; C. W. Chan; F. Li; V. Pathirana; T. Trajkovic; Farzan Gity; Denis Flandre; Valeria Kilchytska (ESSDERC, 2017)