A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS. - Gregory Uhlmann; Tony Aipperspach; Toshiaki Kirihata; K. Chandrasekharan; Yan Zun Li; Chris Paone; Brian Reed; Norman Robson; John Safran; David Schmitt; Subramanian S. Iyer (ISSCC, 2008)

Soft Error Performance of High-Speed Pulsed-DICE-Latch Design in 16 nm and 7 nm FinFET Processes. - Balaji Narasimham; K. Chandrasekharan; J. K. Wang; Bharat L. Bhuva (IRPS, 2019)