Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors. - Mohamed Ali Belaïd; K. Daoud (Microelectron. Reliab., 2010)

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Philippe Eudeline (Microelectron. Reliab., 2011)

Failure analysis of hot-electron effect on power RF N-LDMOS transistors. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Philippe Eudeline (DTIS, 2012)

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. - Mohamed Ali Belaïd; Ahmed M. Nahhas; M. Gares; K. Daoud; Olivier Latry (Microelectron. J., 2014)

Performance drifts of N-MOSFETs under pulsed RF life test. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Olivier Latry (Microelectron. Reliab., 2014)