Reliability study of Power RF LDMOS for Radar Application. - Hichame Maanane; Pierre Bertram; Jérôme Marcon; Mohamed Masmoudi; Mohamed Ali Belaïd; Karine Mourgues; Philippe Eudeline; K. Ketata (Microelectron. Reliab., 2004)

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. - Mohamed Ali Belaïd; K. Ketata; Karine Mourgues; Hichame Maanane; Mohamed Masmoudi; Jérôme Marcon (Microelectron. Reliab., 2005)

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. - Mohamed Ali Belaïd; K. Ketata; Mohamed Masmoudi; M. Gares; Hichame Maanane; Jérôme Marcon (Microelectron. Reliab., 2006)

Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. - Hichame Maanane; Mohamed Masmoudi; Jérôme Marcon; Mohamed Ali Belaïd; Karine Mourgues; C. Tolant; K. Ketata; Philippe Eudeline (Microelectron. Reliab., 2006)

Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET. - M. Alwan; B. Beydoun; K. Ketata; M. Zoaeter (Microelectron. J., 2007)

Reliability study of power RF LDMOS device under thermal stress. - Mohamed Ali Belaïd; K. Ketata; Karine Mourgues; M. Gares; Mohamed Masmoudi; Jérôme Marcon (Microelectron. J., 2007)

Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. - M. Alwan; B. Beydoun; K. Ketata; M. Zoaeter (Microelectron. Reliab., 2007)

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. - Mohamed Ali Belaïd; K. Ketata; M. Gares; Karine Mourgues; Mohamed Masmoudi; Jérôme Marcon (Microelectron. Reliab., 2007)