Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. - G. Néau; Frédéric Martinez; M. Valenza; J. C. Vildeuil; E. Vincent; Frédéric Boeuf; F. Payet; K. Rochereau (Microelectron. Reliab., 2007)