Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. - H.-B. Jo; I.-G. Lee; J.-M. Baek; S. T. Lee; S.-M. Choi; H.-J. Kim; H.-S. Jeong; W.-S. Park; J.-H. Yoo; H.-Y. Lee; D. Y. Yun; S.-W. Son; et al. (VLSI Technology and Circuits, 2022)

Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling. - J.-H. Yoo; H.-B. Jo; I.-G. Lee; S.-M. Choi; J.-M. Baek; S. T. Lee; H. Jang; M. W. Kong; H. H. Kim; H. J. Lee; H.-J. Kim; H.-S. Jeong; et al. (VLSI Technology and Circuits, 2023)

Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of high-frequency and low-noise performance for quantum-computins applications. - J.-H. Yoo; Y.-S. Jeon; S.-W. Son; I.-G. Lee; H.-B. Jo; S.-M. Choi; M.-S. Yu; W.-S. Park; H.-J. Kim; H.-J. Lee; S.-P. Son; S. K. Kim; et al. (VLSI Technology and Circuits, 2024)