Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. - Kai Esmark; Wolfgang Stadler; M. Wendel; Harald Gossner; X. Guggenmos; Wolfgang Fichtner (Microelectron. Reliab., 2001)

Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. - Harald Gossner; T. Müller-Lynch; Kai Esmark; Matthias Stecher (Microelectron. Reliab., 2001)

Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. - Martin Litzenberger; R. Pichler; Sergey Bychikhin; Dionyz Pogany; Erich Gornik; Kai Esmark; Harald Gossner (Microelectron. Reliab., 2001)

Device Simulation and Backside Laser Interferometry–Powerful Tools for ESD Protection Development. - Wolfgang Stadler; Kai Esmark; Harald Gossner; Martin Streibl; M. Wendel; Wolfgang Fichtner; Dionyz Pogany; Martin Litzenberger; Erich Gornik (Microelectron. Reliab., 2002)

Case study of a technology transfer causing ESD problems. - Franz Zängl; Harald Gossner; Kai Esmark; R. Owen; G. Zimmermann (Microelectron. Reliab., 2002)

Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. - Martin Streibl; Kai Esmark; A. Sieck; Wolfgang Stadler; M. Wendel; J. Szatkowski; Harald Gossner (Microelectron. Reliab., 2003)

Transient latch-up: experimental analysis and device simulation. - S. Bargstädt-Franke; Wolfgang Stadler; Kai Esmark; Martin Streibl; Krzysztof Domanski; Horst A. Gieser; Heinrich Wolf; Waclaw Bala (Microelectron. Reliab., 2005)

Test circuits for fast and reliable assessment of CDM robustness of I/O stages. - Wolfgang Stadler; Kai Esmark; K. Reynders; M. Zubeidat; Michael Graf; Wolfgang Wilkening; J. Willemen; Ning Qu; S. Mettler; M. Etherton (Microelectron. Reliab., 2005)

High abstraction level permutational ESD concept analysis. - Martin Streibl; Franz Zängl; Kai Esmark; Robert Schwencker; Wolfgang Stadler; Harald Gossner; S. Drüen; Doris Schmitt-Landsiedel (Microelectron. Reliab., 2005)

SCR operation mode of diode strings for ESD protection. - Ulrich Glaser; Kai Esmark; Martin Streibl; Christian Russ; Krzysztof Domanski; Mauro Ciappa; Wolfgang Fichtner (Microelectron. Reliab., 2007)

Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. - David Alvarez; Kiran V. Chatty; Christian Russ; Michel J. Abou-Khalil; Junjun Li; Robert Gauthier 002; Kai Esmark; Ralph Halbach; Christopher Seguin (Microelectron. Reliab., 2009)

CDM tests on interface test chips for the verification of ESD protection concepts. - Tilo Brodbeck; Kai Esmark; Wolfgang Stadler (Microelectron. Reliab., 2009)

Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. - Michael Heer; Krzysztof Domanski; Kai Esmark; Ulrich Glaser; Dionyz Pogany; Erich Gornik; Wolfgang Stadler (Microelectron. Reliab., 2009)

Reliability aspects of gate oxide under ESD pulse stress. - Adrien Ille; Wolfgang Stadler; Thomas Pompl; Harald Gossner; Tilo Brodbeck; Kai Esmark; Philipp Riess; David Alvarez; Kiran V. Chatty; Robert Gauthier 002; Alain Bravaix (Microelectron. Reliab., 2009)