Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET. - Chen Sun 010; Kaizhen Han; Xiao Gong (ICICDT, 2019)

Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V). - Chengkuan Wang; Annie Kumar; Kaizhen Han; Chen Sun 010; Haiwen Xu; Jishen Zhang; Yuye Kang; Qiwen Kong; Zijie Zheng; Yuxuan Wang; Xiao Gong (VLSI Technology and Circuits, 2022)

First Monolithic Integration of Group IV Waveguide Photodetectors and Modulators on 300 mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit. - Haibo Wang; Gong Zhang 009; Yue Chen; Jishen Zhang; Kaizhen Han; Yi-Chiau Huang; Xiao Gong (VLSI Technology and Circuits, 2022)

Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention. - Zuopu Zhou; Leming Jiao; Jiuren Zhou; Zijie Zheng; Yue Chen; Kaizhen Han; Yuye Kang; Xiao Gong (VLSI Technology and Circuits, 2022)

BEOL-compatible Oxide Semiconductor Devices. - Kaizhen Han (ICICDT, 2023)

Novel Bridge Transmission Line Method for Thin-Film Semiconductors: Modelling, Simulation Verification, and Experimental Demonstration. - Kaizhen Han; Yuye Kang; Yue Chen; Xiao Gong (VLSI Technology and Circuits, 2023)

First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices. - Leming Jiao; Kaizhen Han; Zuopu Zhou; Zijie Zheng; Xiaolin Wang 007; Qiwen Kong; Yuye Kang; Jishen Zhang; Long Liu; Xiao Gong (VLSI Technology and Circuits, 2023)

Thickness-Engineered Extremely-thin Channel High Performance ITO TFTs with Raised S/D Architecture: Record-Low RSD, Highest Moblity (Sub-4 nm TCH Regime), and High VTH Tunability. - Yuye Kang; Kaizhen Han; Yue Chen; Xiao Gong (VLSI Technology and Circuits, 2023)

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving. - Xiaolin Wang 007; Zijie Zheng; Qiwen Kong; Leming Jiao; Kaizhen Han; Chen Sun 010; Zuopu Zhou; Long Liu; Yuye Kang; Gan Liu; Dong Zhang; Xiao Gong (VLSI Technology and Circuits, 2023)

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. - Dong Zhang; Jixuan Wu; Qiwen Kong; Zuopu Zhou; Long Liu; Kaizhen Han; Chen Sun 010; Xiaolin Wang 007; Gan Liu; Leming Jiao; Zijie Zheng; Yuye Kang; et al. (VLSI Technology and Circuits, 2023)

First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. - Zijie Zheng; Leming Jiao; Zuopu Zhou; Yuxuan Wang; Long Liu; Kaizhen Han; Chen Sun 010; Qiwen Kong; Dong Zhang; Xiaolin Wang 007; Kai Ni 004; Xiao Gong (VLSI Technology and Circuits, 2023)

Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration. - Zuopu Zhou; Leming Jiao; Qiwen Kong; Zijie Zheng; Kaizhen Han; Yue Chen; Chen Sun 010; Bich-Yen Nguyen; Xiao Gong (VLSI Technology and Circuits, 2023)

Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K. - Xuanqi Chen; Gan Liu; Wei Shi; Yuye Kang; Qiwen Kong; Yuxuan Wang; Rui Shao; Bich-Yen Nguyen; Gengchiau Liang; Kaizhen Han; Xiao Gong (VLSI Technology and Circuits, 2024)

First Demonstration of BEOL-Compatible 3D Vertical FeNOR. - Yang Feng; Dong Zhang; Chen Sun 010; Zijie Zheng; Yue Chen; Qiwen Kong; Gan Liu; Yuye Kang; Kaizhen Han; Zuopu Zhou; Gengchiau Liang; Kai Ni 004; et al. (VLSI Technology and Circuits, 2024)

Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors. - Gan Liu; Qiwen Kong; Zuopu Zhou; X. Ying; Chen Sun 010; Kaizhen Han; Yuye Kang; Dong Zhang; Xiaolin Wang 007; Yang Feng; Wei Shi; Bich-Yen Nguyen; et al. (VLSI Technology and Circuits, 2024)

First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV Semiconductor. - Gerui Zheng; Enze Zhang; Rami Khazaka; Kaizhen Han; Haiwen Xu; Yuxuan Wang; Hyunsoo Yang; Xiao Gong (VLSI Technology and Circuits, 2024)