Fabrication of strained Si channel PMOSFET on thin relaxed Si1-xGex virtual substrate. - Ding-Lei Mei; Jing-chun Li; Jing Zhang; Wan-jing Xu; Kaizhou Tan; Mo-hua Yang (Microelectron. J., 2004)

A novel p+ Poly-SiGe Gate CMOS device. - Jing Zhang; Kaizhou Tan; Siliu Xu; Zhengfan Zhang; Yukui Liu; Guangbing Chen; Kaicheng Li; Heming Zhang 005; Huiyong Hu (NEMS, 2009)

Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate. - Shengdong Hu; Jun Luo; Kaizhou Tan; Ling Zhang; Zhaoji Li; Bo Zhang 027; Jianlin Zhou; Ping Gan; Guolin Qin; Zhengyuan Zhang (Microelectron. Reliab., 2012)

A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels. - Peijian Zhang; Xue Wu; Qianning Yi; Wensuo Chen; Yonghui Yang; Kunfeng Zhu; Kaizhou Tan; Yi Zhong (Microelectron. Reliab., 2017)