TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (Microelectron. Reliab., 2017)

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. - Kalparupa Mukherjee; Frédéric Darracq; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat (IRPS, 2018)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. - Francesca Chiocchetta; Carlo De Santi; Fabiana Rampazzo; Kalparupa Mukherjee; Jan Grünenpütt; Daniel Sommer; Hervé Blanck; Benoit Lambert; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)