A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS. - Kang Ning 002; James F. Buckwalter (BCICTS, 2018)

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation. - Kang Ning 002; Yihao Fang; Navid Hosseinzadeh; James F. Buckwalter (IEEE J. Solid State Circuits, 2020)

Prospects for High-Efficiency Silicon and lll-V Power Amplifiers and Transmitters in 100-300 GHz Bands. - James F. Buckwalter; Mark J. W. Rodwell; Kang Ning 002; Ahmed S. H. Ahmed; Andrea Arias-Purdue; Jeff Chien; Everett O'Malley; Eythan Lam (CICC, 2021)