19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. - Ki-Tae Park; Jin-Man Han; Dae-Han Kim; Sangwan Nam; Kihwan Choi; Minsu Kim 004; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Kyung-Min Kang; Myung-Hoon Choi; Dong-Hun Kwak; et al. (ISSCC, 2014)

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. - Ki-Tae Park; Sangwan Nam; Dae-Han Kim; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Myung-Hoon Choi; Dong-Hun Kwak; Doo-Hyun Kim; Minsu Kim 004; Hyun Wook Park; Sang-Won Shim; et al. (IEEE J. Solid State Circuits, 2015)

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. - Seungjae Lee 001; Jin-Yub Lee; Il-Han Park; Jong-Yeol Park; Sung-Won Yun; Minsu Kim 004; Jong-Hoon Lee; Min-Seok Kim; Kangbin Lee; Taeeun Kim; Byungkyu Cho; Dooho Cho; et al. (ISSCC, 2016)

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. - Seungjae Lee 001; Chulbum Kim; Minsu Kim 004; Sung-Min Joe; Joonsuc Jang; Seungbum Kim; Kangbin Lee; Jisu Kim; Jiyoon Park; Hanjun Lee; Min-Seok Kim; Seonyong Lee; et al. (ISSCC, 2018)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee 002; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (ISSCC, 2022)