SRAM stability design comprehending 14nm FinFET reliability. - Choelhwyi Bae; Sangwoo Pae; Cheong-sik Yu; Kangjung Kim; Yongshik Kim; Jongwoo Park 001 (IRPS, 2015)

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. - Minjung Jin; Kangjung Kim; Yoohwan Kim; Hyewon Shim; Jinju Kim; Gunrae Kim; Sangwoo Pae (Microelectron. Reliab., 2018)