A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. - Ki-Whan Song; Jinyoung Kim; Jae-Man Yoon; Sua Kim; Huijung Kim; Hyun-Woo Chung; Hyungi Kim; Kanguk Kim; Hwan-Wook Park; Hyun Chul Kang; Nam-Kyun Tak; Dukha Park; et al. (IEEE J. Solid State Circuits, 2010)

14nm DRAM Development and Manufacturing. - Kanguk Kim; Youngwoo Son; Hoin Ryu; Byunghyun Lee; Jooncheol Kim; Hyunsu Shin; Joonyoung Kang; Jihun Kim; Shinwoo Jeong; Kyosuk Chae; Dongkak Lee; Ilwoo Jung; et al. (VLSI Technology and Circuits, 2023)