On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. - Boubacar Traore; Elisa Vianello; Gabriel Molas; Marc Gely; Jean-François Nodin; Eric Jalaguier; Philippe Blaise; Barbara De Salvo; Leonardo R. C. Fonseca; Kanhao Xue; Yoshio Nishi (ESSDERC, 2013)

Naive Bayes classifier based on memristor nonlinear conductance. - Li Li; Zuopai Zhou; Na Bai; Tao Wang; Kanhao Xue; Huajun Sun; Qiang He; Weiming Cheng; Xiangshui Miao (Microelectron. J., 2022)

2022 roadmap on neuromorphic devices and applications research in China. - Qing Wan; Changjin Wan; Huaqiang Wu; Yuchao Yang 001; Xiaohe Huang; Peng Zhou 021; Lin Chen; Tian-Yu Wang; Yi Li 049; Kanhao Xue; Yu-Hui He; Xiangshui Miao; et al. (Neuromorph. Comput. Eng., 2022)

16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current ( pA) Self-Selective Cells. - Yaxin Ding; Jianguo Yang; Yu Liu; Jianfeng Gao 005; Yuan Wang; Pengfei Jiang; Shuxian Lv; Yuting Chen; Boping Wang; Wei Wei; Tiancheng Gong; Kanhao Xue; et al. (VLSI Technology and Circuits, 2023)

Multi-Level RTN with Certain Regularities in Oxide-RRAM: Experiments, Defect Dynamics and 3D Multi-Physics Modeling. - Dejiang Mu; Pan Liu; Zijian Zhou; Zifei Cai; Jian Zhang; Kanhao Xue; Zhigang Ji; Xiangshui Miao; Xingsheng Wang (IRPS, 2025)