Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy. - Hajime Sasaki; Takayuki Hisaka; Kaoru Kadoiwa; Yoshikazu Terai; Yasufumi Fujiwara (IEICE Electron. Express, 2012)

Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation. - Hajime Sasaki; Kaoru Kadoiwa; Hidetoshi Koyama; Yoshitaka Kamo; Yoshitsugu Yamamoto; Toshiyuki Oishi; Kazuo Hayashi (Microelectron. Reliab., 2014)

Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. - Hajime Sasaki; Takayuki Hisaka; Kaoru Kadoiwa; Tomoki Oku; Shinobu Onoda; Takeshi Ohshima; Eiji Taguchi; Hidehiro Yasuda (Microelectron. Reliab., 2018)