Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. - Yuki Yamashita; Steve Stoffels; Niels Posthuma; Karen Geens; Xiangdong Li; Jun Furuta; Stefaan Decoutere; Kazutoshi Kobayashi (IEICE Electron. Express, 2019)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. - Olga Syshchyk; Thibault Cosnier; Zheng-Hong Huang; Deepthi Cingu; Dirk Wellekens; Anurag Vohra; Karen Geens; Pavan Vudumula; Urmimala Chatterjee; Stefaan Decoutere; Tian-Li Wu; Benoit Bakeroot (ESSDERC, 2022)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)