Switching performance of 65 V vertical N-channel FLYMOSFETs. - L. Théolier; Karine Isoird; H. Tranduc; Frederic Morancho; Jaume Roig; Yann Weber; Evgueniy N. Stefanov; Jean-Michel Reynes (Microelectron. J., 2008)

Analysis in commutation of a new high voltage thyristor structure for high temperature. - Gaëtan Toulon; Abdelhakim Bourennane; Karine Isoird (MIXDES, 2013)

Analysis of an ESD failure mechanism on a SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2014)

An improved junction termination design using deep trenches for superjunction power devices. - Sylvain Noblecourt; Frederic Morancho; Karine Isoird; Patrick Austin; Josiane Tasselli (MIXDES, 2015)

Failure analysis of ESD-stressed SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2015)

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. - Chaymaa Haloui; Gaëtan Toulon; Josiane Tasselli; Yvon Cordier; Éric Frayssinet; Karine Isoird; Frédéric Morancho; Mathieu Gavelle (MIXDES, 2020)

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. - Daniel Rouly; Josiane Tasselli; Patrick Austin; Chaymaa Haloui; Karine Isoird; Frédéric Morancho (MIXDES, 2022)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)