Scaling of pHEMTs to Decanano Dimensions. - Karol Kalna; Asen Asenov; K. Elgaid; Iain Thayne (VLSI Design, 2001)

Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study. - Karol Kalna; Asen Asenov (Math. Comput. Simul., 2003)

A High-Performance Parallel Device Simulator for High Electron Mobility Transistors. - Natalia Seoane; Antonio J. García-Loureiro; Karol Kalna; Asen Asenov (PARCO, 2005)

Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. - Manuel Aldegunde; Antonio J. García-Loureiro; Karol Kalna (LSSC, 2007)

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. - Manuel Aldegunde; Natalia Seoane; Antonio J. García-Loureiro; Karol Kalna (Comput. Phys. Commun., 2010)

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. - Brahim Benbakhti; J. S. Ayubi-Moak; Karol Kalna; D. Lin; Geert Hellings; Guy Brammertz; Kristin De Meyer; Iain Thayne; Asen Asenov (Microelectron. Reliab., 2010)

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. - Antonio J. García-Loureiro; Natalia Seoane; Manuel Aldegunde; Raúl Valín Ferreiro; Asen Asenov; Antonio Martinez; Karol Kalna (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2011)

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. - Manuel Aldegunde; Karol Kalna (Comput. Phys. Commun., 2015)

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. - Guillermo Indalecio Fernández; Natalia Seoane; Manuel Aldegunde; Karol Kalna; Antonio J. García-Loureiro (J. Low Power Electron., 2015)

Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. - Muhammad A. Elmessary; Daniel Nagy; Manuel Aldegunde; Antonio J. García-Loureiro; Karol Kalna (ESSDERC, 2017)

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures. - Khaled Ahmeda; Brendan Ubochi; Brahim Benbakhti; Steven J. Duffy; Ali Soltani; Wei Dong Zhang 002; Karol Kalna (IEEE Access, 2017)

Operational frequency degradation induced trapping in scaled GaN HEMTs. - Brendan Ubochi; Soroush Faramehr; Khaled Ahmeda; Petar Igic; Karol Kalna (Microelectron. Reliab., 2017)

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. - Steven J. Duffy; Brahim Benbakhti; Karol Kalna; Mohammed Boucherta; Wei Dong Zhang 002; Nour-Eddine Bourzgui; Ali Soltani (IEEE Access, 2018)

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. - Olujide Adenekan; Paul Holland; Karol Kalna (Microelectron. J., 2018)

Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs. - Daniel Nagy; Guillermo Indalecio Fernández; Antonio J. García-Loureiro; Gabriel Espineira; Muhammad A. Elmessary; Karol Kalna; Natalia Seoane (IEEE Access, 2019)

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes. - Daniel Nagy; Gabriel Espineira; Guillermo Indalecio Fernández; Antonio J. García-Loureiro; Karol Kalna; Natalia Seoane (IEEE Access, 2020)