Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. - Konrad Seidel; Kati Biedermann; Jan Van Houdt; Tarek Ali; Raik Hoffmann; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Philipp Steinke; K. Zimmermann (NVMTS, 2019)

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. - David Lehninger; Hannes Mähne; Tarek Ali; Raik Hoffmann; Ricardo Olivo; Maximilian Lederer; Konstantin Mertens; Thomas Kämpfe; Kati Biedermann; Matthias Landwehr; Andreas Heinig; Defu Wang; et al. (IMW, 2022)

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. - Konrad Seidel; David Lehninger; Raik Hoffmann; Tarek Ali; Maximilian Lederer; Ricardo Revello; Konstantin Mertens; Kati Biedermann; Yukai Shen; Defu Wang; Matthias Landwehr; Andreas Heinig; et al. (VLSI Technology and Circuits, 2022)