A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors. - Katsuhiko Degawa; Takafumi Aoki; Tatsuo Higuchi 001; Hiroshi Inokawa; Katsuhiko Nishiguchi; Yasuo Takahashi (ISMVL, 2006)

Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors. - Wancheng Zhang; Katsuhiko Nishiguchi; Yukinori Ono; Akira Fujiwara; Hiroshi Yamaguchi; Hiroshi Inokawa; Yasuo Takahashi; Nan-Jian Wu (IEICE Trans. Electron., 2007)