A 34-ns 16-Mb DRAM with controllable voltage down-converter. - Hideto Hidaka; Kazutami Arimoto; Kazutoshi Hirayama; Masanori Hayashikoshi; Mikio Asakura; Masaki Tsukude; Tsukasa Oishi; Shinji Kawai; Katsuhiro Suma; Yasuhiro Konishi; Koji Tanaka; Wataru Wakamiya; et al. (IEEE J. Solid State Circuits, 1992)

Highly Reliable Testing of ULSI Memories with On-Chip Voltage-Down Converters. - Masaki Tsukude; Kazutami Arimoto; Hideto Hidaka; Yasuhiro Konishi; Masanori Hayashikoshi; Katsuhiro Suma; Kazuyasu Fujishima (IEEE Des. Test Comput., 1993)

An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology. - Katsuhiro Suma; Takahiro Tsuruda; Hideto Hidaka; Takahisa Eimori; Toshiyuki Oashi; Yasuo Yamaguchi; Toshiaki Iwamatsu; Masakazu Hirose; Fukashi Morishita; Kazutarni Arimoto; Kazuyasu Fujishima; Yasuo Inoue; et al. (IEEE J. Solid State Circuits, 1994)