An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory. - Akira Otake; Keita Yamaguchi; Katsumasa Kamiya; Yasuteru Shigeta; Kenji Shiraishi (IEICE Trans. Electron., 2011)

Ab initio modeling of resistive switching mechanism in binary metal oxides. - Blanka Magyari-Köpe; Liang Zhao; Yoshio Nishi; Katsumasa Kamiya; Moon Young Yang; Kenji Shiraishi (ISCAS, 2014)

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories. - Hiroki Shirakawa; Keita Yamaguchi; Masaaki Araidai; Katsumasa Kamiya; Kenji Shiraishi (IEICE Trans. Electron., 2017)