The present state of the art in high-power semiconductor devices. - Katsumi Satoh; Masanori Yamamoto (Proc. IEEE, 2001)

Chip Improvements for Future IGBT Modules. - John F. Donlon; Eric R. Motto; Tetsuo Takahashi; Hidenori Fujii; Katsumi Satoh (IAS, 2008)

Switching of 3300V Scaled IGBT by 5V Gate Drive. - Toshiro Hiramoto; Katsumi Satoh; Tomoko Matsudai; Wataru Saito; Kuniyuki Kakushima; Takuya Hoshii; Kazuyoshi Furukawa; Masahiro Watanabe; Naoyuki Shigyo; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; et al. (ASICON, 2019)