Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration. - Ziyuan Liu; Fumihiko Hayashi; Shinji Fujieda; Markus Wilde; Katsuyuki Fukutani (ICICDT, 2012)

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. - Yusuke Higashi; Riichiro Takaishi; Koichi Kato; Masamichi Suzuki; Yasushi Nakasaki; Mitsuhiro Tomita; Yuichiro Mitani; Masuaki Matsumoto; Shohei Ogura; Katsuyuki Fukutani; Kikuo Yamabe (Microelectron. Reliab., 2017)