A 0.9V, 3.1-10.6 GHz CMOS LNA with high gain and wideband input match in 90 nm CMOS process. - Sunil Kumar Pandey; Pravin Neminath Kondekar; Kaushal Nigam; Dheeraj Sharma (APCCAS, 2016)

Approach on electrically doped TFET for suppression of ambipolar and improving RF performance. - Bandi Venkata Chandan; Kaushal Nigam; Dheeraj Sharma (IET Circuits Devices Syst., 2019)

Temperature sensitivity analysis of SGO metal strip JL TFET. - Kaushal Nigam; Satyendra Kumar; Km Sucheta Singh; Eshaan Bhardwaj; Shubham Choubey; Savitesh Chaturvedi (IET Circuits Devices Syst., 2020)

Sensitivity Assessment of Electrically Doped Cavity on Source Junctionless Tunnel Field-Effect Transistor-Based Biosensor. - Mukesh Kumar Bind; Kaushal Nigam; Sajai Vir Singh (J. Circuits Syst. Comput., 2023)

Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance. - Priyanka Kwatra; Sajai Vir Singh; Kaushal Nigam (Microelectron. J., 2023)

Theoretical Investigation of Dual-Material Stacked Gate Oxide-Source Dielectric Pocket TFET Based on Interface Trap Charges and Temperature Variations. - Kaushal Nigam; Vinay Anand Tikkiwal; Mukesh Kumar Bind (J. Circuits Syst. Comput., 2023)

Mole Fraction-Based Approach for Sensitivity Analysis of Dual Material Control Gate Polarity Controlled Tunnel Field Effect Transistor for Applications in Biomedical Engineering. - Maturkar Shreyanshi; Kaushal Nigam; Ajay Singh Raghuvanshi (J. Circuits Syst. Comput., 2024)

Design and Performance Analysis of Polarity Control Junctionless TFET (PC-JL-TFET)-Based Biosensor. - Mukesh Kumar Bind; Sajai Vir Singh; Kaushal Nigam (J. Circuits Syst. Comput., 2024)