An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system. - Satoshi Masuda; Tsuyoshi Takahashi; Kazukiyo Joshin (IEEE J. Solid State Circuits, 2003)

High Power GaN-HEMT for Wireless Base Station Applications. - Toshihide Kikkawa; Kazukiyo Joshin (IEICE Trans. Electron., 2006)

60 and 77GHz Power Amplifiers in Standard 90nm CMOS. - Toshihide Suzuki; Yoichi Kawano; Masaru Sato 001; Tatsuya Hirose; Kazukiyo Joshin (ISSCC, 2008)

Special Section on Microwave and Millimeter-wave Technologies. - Kazukiyo Joshin (IEICE Trans. Electron., 2008)

A 77GHz transceiver in 90nm CMOS. - Yoichi Kawano; Toshihide Suzuki; Masaru Sato 001; Tatsuya Hirose; Kazukiyo Joshin (ISSCC, 2009)

Millimeter-Wave GaN HEMT for Power Amplifier Applications. - Kazukiyo Joshin; Kozo Makiyama; Shiro Ozaki; Toshihiro Ohki; Naoya Okamoto; Yoshitaka Niida; Masaru Sato 001; Satoshi Masuda; Keiji Watanabe (IEICE Trans. Electron., 2014)

High-Speed Optical and Millimeter-Wave Wireless Link for Disaster Recovery. - Ken-ichi Kitayama; Yuki Yoshida; Yuya Yamaguchi; Hirochika Nakajima; Kohsuke Nishimura; Abdelmoula Bekkali; Masayuki Oishi; Hidenori Iwai; Kazuya Ota; Norihiko Sato; Naoyasu Kamiya; Keiji Tanaka; et al. (GLOBECOM Workshops, 2015)

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. - Masaru Sato 001; Yoshitaka Niida; Toshihide Suzuki; Yasuhiro Nakasha; Yoichi Kawano; Taisuke Iwai; Naoki Hara; Kazukiyo Joshin (IEICE Trans. Electron., 2017)