A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. - Kazushige Kanda; Masaru Koyanagi; Toshio Yamamura; Koji Hosono; Masahiro Yoshihara; Toru Miwa; Yosuke Kato; Alex Mak; Siu Lung Chan; Frank Tsai; Raul Cernea; Binh Le; et al. (ISSCC, 2008)

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. - Yan Li; Seungpil Lee; Ken Oowada; Hao Nguyen; Qui Nguyen; Nima Mokhlesi; Cynthia Hsu; Jason Li 001; Venky Ramachandra; Teruhiko Kamei; Masaaki Higashitani; Tuan Pham; et al. (ISSCC, 2012)

A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. - Noboru Shibata; Kazushige Kanda; Toshiki Hisada; Katsuaki Isobe; Manabu Sato; Yui Shimizu; Takahiro Shimizu; Takahiro Sugimoto; Tomohiro Kobayashi; Kazuko Inuzuka; Naoaki Kanagawa; Yasuyuki Kajitani; et al. (ISSCC, 2012)