Yield and reliability of MNOS EEPROM products. - Yoshiaki Kamigaki; Shin-Ichi Minami; Takaaki Hagiwara; Kazunori Furusawa; Takeshi Furuno; Ken Uchida; Masaaki Terasawa; Koubu Yamazaki (IEEE J. Solid State Circuits, 1989)

A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications. - Atsushi Nozoe; Hiroaki Kotani; Tetsuya Tsujikawa; Keiichi Yoshida; Kazunori Furusawa; Masataka Kato; Toshiaki Nishimoto; Hitoshi Kume; Hideaki Kurata; Naoki Miyamoto; Shoji Kubono; Michitaro Kanamitsu; et al. (IEEE J. Solid State Circuits, 1999)

A 126.6-mm2 AND-type 512-Mb flash memory with 1.8-V power supply. - Tatsuya Ishii; Kazuyoshi Oshima; Hiroshi Sato; Satoshi Noda; Jiro Kishimoto; Hiroaki Kotani; Atsushi Nozoe; Kazunori Furusawa; Takayuki Yoshitake; Masataka Kato; Masahito Takahashi; Akihiko Sato; et al. (IEEE J. Solid State Circuits, 2001)

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Keiichi Yoshida; Yoshinori Takase; Takayuki Yoshitake; Osamu Tsuchiya; Yoshinori Ikeda; Shunichi Narumi; Michitaro Kanamitsu; et al. (IEICE Trans. Electron., 2006)

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. - Hideaki Kurata; Satoshi Noda; Yoshitaka Sasago; Kazuo Otsuga; Tsuyoshi Arigane; Tetsufumi Kawamura; Takashi Kobayashi 002; Hitoshi Kume; Kazuki Homma; Teruhiko Ito; Yoshinori Sakamoto; Masahiro Shimizu; et al. (IEICE Trans. Electron., 2007)

Orbital formation control of multiple spacecraft. - Tin Duc Le; Kazunori Furusawa; Tomohisa Hayakawa (ACC, 2010)