A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jong Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (ISSCC, 2008)

A 70 nm 16 Gb 16-Level-Cell NAND flash Memory. - Noboru Shibata; Hiroshi Maejima; Katsuaki Isobe; Kiyoaki Iwasa; Michio Nakagawa; Masaki Fujiu; Takahiro Shimizu; Mitsuaki Honma; Satoru Hoshi; Toshimasa Kawaai; Kazunori Kanebako; Susumu Yoshikawa; et al. (IEEE J. Solid State Circuits, 2008)

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. - Cuong Trinh; Noboru Shibata; Takeshi Nakano; Mikio Ogawa; Jumpei Sato; Yoshikazu Takeyama; Katsuaki Isobe; Binh Le; Farookh Moogat; Nima Mokhlesi; Kenji Kozakai; Patrick Hong; et al. (ISSCC, 2009)

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jongmin Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (IEEE J. Solid State Circuits, 2009)