A 16-ns 1-Mb CMOS EPROM. - Masao Kuriyama; Shigeru Atsumi; Ken-ichi Imamiya; Yumiko Iyama; Naohiro Matsukawa; Hitoshi Araki; Kazuhito Narita; Kazunori Masuda; Sumio Tanaka (IEEE J. Solid State Circuits, 1990)

A 35 ns cycle time 3.3 V only 32 Mb NAND flash EEPROM. - Yoshihisa Iwata; Ken-ichi Imamiya; Yoshihisa Sugiura; Hiroshi Nakamura; Hideko Oodaira; Masaki Momodomi; Yasuo Itoh; Toshiharu Watanabe; Hitoshi Araki; Kazuhito Narita; Kazunori Masuda; Junichi Miyamoto (IEEE J. Solid State Circuits, 1995)

A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller. - Toru Tanzawa; Akira Umezawa; Tadayuki Taura; Hitoshi Shiga; Tokumasa Hara; Yoshinori Takano; Takeshi Miyaba; Naoya Tokiwa; Kentaro Watanabe; Hiroshi Watanabe; Kazunori Masuda; Kiyomi Naruke; et al. (IEEE J. Solid State Circuits, 2002)

Effect of VER on Blood Flow Velocity in Intracranial Aneurysms Treated by Coil Embolization using CFD. - Haruki Kanebayashi; Soichiro Fujimura; Kazunori Masuda; Kostadin Karagiozov; Hiroyuki Takao; Toshihiro Ishibashi; Yuichi Murayama; Makoto Yamamoto (EMBC, 2024)