Combined Detection Method in a Sea Surveillance System. - Kazuya Takahashi; Yoshiki Kobayashi; Miyuki Fujii; Naoyuki Shimbo; Hirotada Ueda; Kazuo Tsutsui (IEICE Trans. Inf. Syst., 2005)

Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. - Yongshik Kim; Kunihiro Miyauchi; Shun'ichiro Ohmi; Kazuo Tsutsui; Hiroshi Iwai (Microelectron. J., 2005)

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. - Jin-Aun Ng; Nobuyuki Sugii; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Takeo Hattori; Hiroshi Iwai (IEICE Electron. Express, 2006)

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. - Joel Molina Reyes; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (IEICE Electron. Express, 2007)

Parasitic Effects in Multi-Gate MOSFETs. - Yusuke Kobayashi 002; C. Raghunathan Manoj; Kazuo Tsutsui; Venkanarayan Hariharan; Kuniyuki Kakushima; V. Ramgopal Rao; Parhat Ahmet; Hiroshi Iwai (IEICE Trans. Electron., 2007)

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. - Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2008)

SrO capping effect for La2O3/Ce-silicate gate dielectrics. - Kuniyuki Kakushima; K. Okamoto; T. Koyanagi; M. Kouda; Kiichi Tachi; Takamasa Kawanago; J. Song; Parhat Ahmet; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; et al. (Microelectron. Reliab., 2010)

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. - Kuniyuki Kakushima; Kiichi Tachi; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2010)

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. - Yusuke Kobayashi 002; Kuniyuki Kakushima; Parhat Ahmet; V. Ramgopal Rao; Kazuo Tsutsui; Hiroshi Iwai (Microelectron. Reliab., 2010)

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. - D. Zade; Soshi Sato; Kuniyuki Kakushima; A. Srivastava; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Chandan Kumar Sarkar; Hiroshi Iwai (Microelectron. Reliab., 2011)

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. - Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kazuo Tsutsui; Kenji Natori; Takeo Hattori; Hiroshi Iwai (ESSDERC, 2012)

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. - Chunmeng Dou; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2012)

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. - M. Mamatrishat; T. Kubota; T. Seki; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2012)

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. - Takamasa Kawanago; Kuniyuki Kakushima; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Kenji Natori; Hiroshi Iwai (ESSDERC, 2013)

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. - Chunmeng Dou; Tomoya Shoji; Kazuhiro Nakajima; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Kenji Natori; Hiroshi Iwai (Microelectron. Reliab., 2014)

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. - Yan Wu; Hiroyuki Hasegawa; Kuniyuki Kakushima; Kenji Ohmori; Takanobu Watanabe; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Yoshinori Kataoka; Kenji Natori; Keisaku Yamada; et al. (Microelectron. Reliab., 2014)

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. - Wei Li; Akito Sasaki; Hideyuki Oozu; Katsuaki Aoki; Kuniyuki Kakushima; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Kenji Natori; Hiroshi Iwai (Microelectron. Reliab., 2015)

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. - Wei Li; Akito Sasaki; Hideyuki Oozu; Katsuaki Aoki; Kuniyuki Kakushima; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Kenji Natori; Hiroshi Iwai (Microelectron. Reliab., 2015)

La2O3 gate dielectrics for AlGaN/GaN HEMT. - J. Chen; Takamasa Kawanago; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; D. Nohata; Hiroshi Nohira; Kuniyuki Kakushima (Microelectron. Reliab., 2016)

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. - J. Chen; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Kuniyuki Kakushima (Microelectron. Reliab., 2016)

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. - M. S. Hadi; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Kuniyuki Kakushima (Microelectron. Reliab., 2016)

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). - Kazuo Tsutsui; Kuniyuki Kakushima; Takuya Hoshii; A. Nakajima; Shinichi Nishizawa; Hitoshi Wakabayashi; Iriya Muneta; K. Sato; Tomoko Matsudai; Wataru Saito; Takuya Saraya; K. Itou; et al. (ASICON, 2017)

Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries. - Akito Sasaki; Hideyuki Oozu; Miho Nakamura; Katsuaki Aoki; Yoshinori Kataoka; Syuichi Saito; Kumpei Kobayashi; Wei Li; Kuniyuki Kakushima; Kazuo Tsutsui; Hiroshi Iwai (Microelectron. Reliab., 2017)

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. - Takuya Hoshii; Kazuyoshi Furukawa; Kuniyuki Kakushima; Masahiro Watanabe; Naoyuki Shigvo; Takuya Saraya; Toshihiko Takakura; Kazuo Itou; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Iriya Muneta; et al. (ESSDERC, 2018)

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. - Kuniyuki Kakushima; Takuya Hoshii; M. Watanabe; N. Shizyo; K. Furukawa; Takuya Saraya; T. Takakura; K. Itou; M. Fukui; S. Suzuki; Ken Takeuchi; Iriya Muneta; et al. (VLSI Circuits, 2018)

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing. - Yiming Lei; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Masayuki Furuhashi; Shingo Tomohisa; Satoshi Yamakawa; Kuniyuki Kakushima (Microelectron. Reliab., 2018)

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. - Yiming Lei; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Masayuki Furuhashi; Shingo Tomohisa; Satoshi Yamakawa; Kuniyuki Kakushima (Microelectron. Reliab., 2018)

Switching of 3300V Scaled IGBT by 5V Gate Drive. - Toshiro Hiramoto; Katsumi Satoh; Tomoko Matsudai; Wataru Saito; Kuniyuki Kakushima; Takuya Hoshii; Kazuyoshi Furukawa; Masahiro Watanabe; Naoyuki Shigyo; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; et al. (ASICON, 2019)