40 nm Dual-port and two-port SRAMs for automotive MCU applications under the wide temperature range of -40 to 170°C with test screening against write disturb issues. - Yoshisato Yokoyama; Yuichiro Ishii; Koji Tanaka; Tatsuya Fukuda; Yoshiki Tsujihashi; Atsushi Miyanishi; Shinobu Asayama; Keiichi Maekawa; Kazutoshi Shiba; Koji Nii (A-SSCC, 2014)

40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU. - Yoshisato Yokoyama; Yuichiro Ishii; Hidemitsu Kojima; Atsushi Miyanishi; Yoshiki Tsujihashi; Shinobu Asayama; Kazutoshi Shiba; Koji Tanaka; Tatsuya Fukuda; Koji Nii; Kazumasa Yanagisawa (ISQED, 2014)