On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants. - Nobuyuki Sano; Kazuya Matsuzawa; Mikio Mukai; Noriaki Nakayama (Microelectron. Reliab., 2002)

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. - Masataka Miyake; Daisuke Hori; Norio Sadachika; Uwe Feldmann; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Takahiro Iizuka; Kazuya Matsuzawa; Yasuyuki Sahara; Teruhiko Hoshida; Toshiro Tsukada (IEICE Trans. Electron., 2009)

Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component. - Yuichiro Mitani; Shigeto Fukatsu; Daisuke Hagishima; Kazuya Matsuzawa (ICICDT, 2012)

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. - Chenyue Ma; Hans Jürgen Mattausch; Masataka Miyake; Takahiro Iizuka; Kazuya Matsuzawa; Seiichiro Yamaguchi; Teruhiko Hoshida; Akinori Kinoshita; Takahiko Arakawa; Jin He 003; Mitiko Miura-Mattausch (IEICE Trans. Electron., 2013)

Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing. - Yuichiro Mitani; Kazuya Matsuzawa (ICICDT, 2015)

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications. - Li Zhang 033; Mitsuo Koike; Mizuki Ono; Shogo Itai; Kazuya Matsuzawa; Syotaro Ono; Wataru Saito; Masakazu Yamaguchi; Yohei Hayase; Keiryo Hara (Microelectron. Reliab., 2015)